Prof. dr. Luigi Colombo: Graphene and Graphene Device Integration: A Materials Perspective

Datum objave: 8. 4. 2013
Kolokvij na IJS
torek, 9. 4. 2013, ob 13h v Veliki predavalnici IJS, Jamova 39, Ljubljana

Vabimo vas na 16. predavanje iz sklopa "Kolokviji na IJS" v letu 2012/13, ki bo v torek, 9. aprila 2013, ob 13. uri v Veliki predavalnici Instituta »Jožef Stefan«  na Jamovi cesti 39 v Ljubljani. Napovednik predavanja najdete tudi na naslovu http://www.ijs.si/ijsw/Koledar_prireditev, posnetke preteklih predavanj pa na http://videolectures.net/kolokviji_ijs.

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prof. dr. Luigi Colombo

Texas Instruments Incorporated, Dallas, ZDA

 

Grafen in integracija grafenskih naprav kot izziv s stališča materialov

 

V preteklem desetletju se je značilna velikost gradnikov vrhunske elektronike na osnovi silicija zmanjšala s 100 nm ali več na 30 nm in manj. Da bi rešili težave z močjo, s katerimi se elektronska industrija srečuje ob nadaljnji miniaturizaciji CMOS naprav, je bil ustanovljen program z imenom Nanoelectronic Research Initiative. Namen tega programa je razviti nove materiale in naprave, ki bodo izkoriščali nove spremenljivke stanja ter tako izboljšali delovanje pri dani gostoti moči. Grafen, satasta enoslojna mreža atomov ogljika, je zaradi enkratnih transportnih lastnosti in izjemnih kemijskih in fizikalnih lastnosti v zadnjem času predmet mnogih teoretičnih in eksperimentalnih raziskav. Na osnovi grafena bi lahko izdelali nove naprave, ki izkoriščajo teoretično napovedani obstoj Bose-Einsteinovega kondenzata v dvoslojnih grafenskih filmih, tunelski in lateralni tunelski transistor na poljski efekt ter naprave na osnovi Veselagove leče. Da bi pokazali, da ti predlogi izpolnjujejo osnovne tehnične zahteve, potrebujemo visokokakovostne filme, ki jih je mogoče povezati z dielektriki in opremiti s kovinskimi stiki. Pregledali bomo potrebe po napravah onstran CMOS, rast velikih grafena z veliko površino, integracijo dielektrikov in kovinskih stikov z grafenom ter njihove učinke na karakteristike tranzistorjev na poljski efekt.

Predavanje bo v angleščini.

Lepo vabljeni!

 

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We invite you to the 16th Institute colloquium in the academic year 2012/13. The colloquium will be held on Tuesday April 9, 2013 at 1 PM in the main Institute lecture hall, Jamova 39, Ljubljana. To read the abstract click  http://www.ijs.si/ijsw/Koledar_prireditev. Past colloquia are posted on  http://videolectures.net/kolokviji_ijs.

 

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prof. dr. Luigi Colombo

Texas Instruments Incorporated, Dallas, USA

 

Graphene and Graphene Device Integration: A Materials Perspective

 

In the past decade, the state-of-the-art silicon-based electronics has gone from devices at or above 100 nm to the realm of 30 nm and below. In order to address the power issues the industry is facing as CMOS devices are scaled further, a program called Nanoelectronic Research Initiative was created to develop new materials and devices that take advantage of new state variables with the objective of improving performance per power density. Graphene, a monolayer of carbon atoms arranged in a honeycomb lattice, has recently been subject of considerable theoretical and experimental interest because of its unique transport properties together with exceptional chemical and physical properties. New devices taking advantage of the theoretical prediction on the existence of a Bose-Einstein condensate in bi-layer graphene films, graphene based tunnel FETs, lateral tunnel FETs, and Veselago lens based devices have been proposed. However, in order to demonstrate that any of the proposed can meet the most basic device requirements, high quality films will have to be developed and integrated with dielectrics and metal contacts. We will review the need for devices beyond CMOS, growth of large area graphene and integration of dielectrics and metal contacts with graphene and their effects on field effect transistors characteristics